Search results for "p–n junction"

showing 3 items of 3 documents

Optimization of impurity profile for p-n junction in heterostructures

2005

We analyze the dopant diffusion in p-n-junction in heterostructure, by solving the diffusion equation with space-varying diffusion coefficient. For a step-wise spatial distribution we find the optimum annealing time to decrease the p-n-junction thickness and to increase the homogeneity of impurity concentration in p or n regions.

Diffusion equationMaterials scienceDopantCondensed matter physicsEpitaxial layerAnnealing (metallurgy)radiation defectsHeterojunctionCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceImpurityCondensed Matter::SuperconductivityHomogeneity (physics)Effective diffusion coefficientHeterojunctionp–n junctionOptimization of impurity
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Mg and In Codoped p-type AlN Nanowires for pn Junction Realization.

2019

Efficient, mercury-free deep ultraviolet (DUV) light-emitting diodes (LEDs) are becoming a crucial challenge for many applications such as water purification. For decades, the poor p-type doping and difficult current injection of Al-rich AlGaN-based DUV LEDs have limited their efficiency and therefore their use. We present here the significant increase in AlN p-doping thanks to Mg/In codoping, which leads to an order of magnitude higher Mg solubility limit in AlN nanowires (NWs). Optimal electrical activation of acceptor impurities has been further achieved by electron irradiation, resulting in tunnel conduction through the AlN NW p-n junction. The proposed theoretical scenario to account f…

Materials scienceNanowireBioengineering02 engineering and technologymedicine.disease_causelaw.inventionsymbols.namesake[SPI]Engineering Sciences [physics]lawmedicineGeneral Materials Science[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/MicroelectronicsComputingMilieux_MISCELLANEOUSDiode[PHYS]Physics [physics]business.industryMechanical EngineeringElectron beam-induced currentDopingGeneral Chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicssymbolsOptoelectronics0210 nano-technologybusinessRaman spectroscopyp–n junctionUltravioletLight-emitting diodeNano letters
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Influence of mobile ions on the electroluminescence characteristics of methylammonium lead iodide perovskite diodes

2016

In this work, we study the effect of voltage bias on the optoelectronic behavior of methylammonium lead iodide planar diodes. Upon biasing the diodes with a positive voltage, the turn-on voltage of the electroluminescence diminishes and its intensity substantially increases. This behavior is reminiscent of that observed in light-emitting electrochemical cells (LECs), single-layer electroluminescent devices in which the charge injection is assisted by the accumulation of ions at the electrode interface. Because of this mechanism, performances are largely independent from the work function of the electrodes. The similarities observed between planar perovskite diodes and LECs suggest that mobi…

SOLAR-CELLSMaterials scienceEMITTING ELECTROCHEMICAL-CELLSEXCITON BINDING-ENERGY02 engineering and technologyElectroluminescence010402 general chemistry01 natural sciencesElectrochemical cellEFFECTIVE MASSESRECENT PROGRESSGeneral Materials ScienceWork functionHYSTERESISPerovskite (structure)DiodeRenewable Energy Sustainability and the Environmentbusiness.industryBiasingGeneral ChemistryPERFORMANCE021001 nanoscience & nanotechnologyTURN-ON TIMESHALIDE PEROVSKITES0104 chemical sciencesP-N-JUNCTIONElectrodeOptoelectronics0210 nano-technologybusinessp–n junctionJournal of Materials Chemistry A
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